IRFD9020 www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg - + VDD - 10 V ent (A) Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit , Drain Curr D t t t t -I d(on) r d(off) f VGS 10 % 90 % TA, Ambient Temperature (°C) VDS Fig. 10b - Switching Time WaveformsFig. 9 - Maximum Drain Current vs. Ambient Temperature)thJAThermal Response (Zt1, Rectangular Pulse Duration (s)Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient L IAS V DS Vary tp to obtain required IAS VDS R D.U.T. g - + V DD I V AS DD - 10 V tp t 0.01 p Ω VDS Fig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive Waveforms S16-1506-Rev. D, 01-Aug-16 5 Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000