Datasheet SS32 - SS320 (Taiwan Semiconductor)
| Hersteller | Taiwan Semiconductor |
| Beschreibung | 3A, 100V Schottky Barrier Surface Mount Rectifier in DO-214AB (SMC) package |
| Seiten / Seite | 8 / 1 — SS32 – SS320. 3A, 20V - 200V Schottky Barrier Surface Mount Rectifier. … |
| Dateiformat / Größe | PDF / 552 Kb |
| Dokumentensprache | Englisch |
SS32 – SS320. 3A, 20V - 200V Schottky Barrier Surface Mount Rectifier. FEATURES. KEY PARAMETERS. PARAMETER. VALUE. UNIT. APPLICATIONS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SS32 – SS320
Taiwan Semiconductor
3A, 20V - 200V Schottky Barrier Surface Mount Rectifier FEATURES KEY PARAMETERS
● Low power loss, high efficiency
PARAMETER VALUE UNIT
● Ideal for automated placement I ● F 3 A Guard ring for overvoltage protection ● High surge current capability VRRM 20 - 200 V ● Moisture sensitivity level: level 1, per J-STD-020 IFSM 75, 100 A ● RoHS Compliant T ● J MAX 125, 150 °C Halogen-free Package DO-214AB (SMC)
APPLICATIONS
Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● Converter
MECHANICAL DATA
● Case: DO-214AB (SMC) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.210g (approximately)
DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
SS SS SS SS SS SS SS SS SS PARAMETER SYMBOL UNIT 32 33 34 35 36 39 310 315 320
Repetitive peak reverse V voltage RRM 20 30 40 50 60 90 100 150 200 V Reverse voltage, total rms V value R(RMS) 14 21 28 35 42 63 70 105 140 V Forward current IF 3 A Peak forward surge current, 8.3ms single half sine-wave IFSM 100 75 A superimposed on rated load Critical rate of rise of off- dV/dt 10,000 V/µs state voltage Junction temperature TJ - 55 to +125 - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: Q2412
Taiwan Semiconductor
3A, 20V - 200V Schottky Barrier Surface Mount Rectifier FEATURES KEY PARAMETERS
● Low power loss, high efficiency
PARAMETER VALUE UNIT
● Ideal for automated placement I ● F 3 A Guard ring for overvoltage protection ● High surge current capability VRRM 20 - 200 V ● Moisture sensitivity level: level 1, per J-STD-020 IFSM 75, 100 A ● RoHS Compliant T ● J MAX 125, 150 °C Halogen-free Package DO-214AB (SMC)
APPLICATIONS
Configuration Single die ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● Converter
MECHANICAL DATA
● Case: DO-214AB (SMC) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.210g (approximately)
DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
SS SS SS SS SS SS SS SS SS PARAMETER SYMBOL UNIT 32 33 34 35 36 39 310 315 320
Repetitive peak reverse V voltage RRM 20 30 40 50 60 90 100 150 200 V Reverse voltage, total rms V value R(RMS) 14 21 28 35 42 63 70 105 140 V Forward current IF 3 A Peak forward surge current, 8.3ms single half sine-wave IFSM 100 75 A superimposed on rated load Critical rate of rise of off- dV/dt 10,000 V/µs state voltage Junction temperature TJ - 55 to +125 - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: Q2412