Datasheet 2N1613 (Philips) - 4

Philips Semiconductors Product specification NPN medium power transistor 2N1613
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tamb = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 0.1 mA; VCE = 10 V 20 − IC = 10 mA; VCE = 10 V; note 1 35 − IC = 10 mA; VCE = 10 V; Tamb = −55 °C 20 − IC = 150 mA; VCE = 10 V; note 1 40 120 IC = 500 mA; VCE = 10 V; note 1 20 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 1.5 V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA − 1.3 V Cc collector capacitance IE = ie = 0; VCB = 10 V − 25 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V − 80 pF fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 60 − MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1997 Apr 11 4 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT5/11 DEFINITIONS LIFE SUPPORT APPLICATIONS