Datasheet 2N1613 (Philips) - 3

HerstellerPhilips
BeschreibungNPN medium power transistor in TO-39 package
Seiten / Seite8 / 3 — LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. THERMAL …
Dateiformat / GrößePDF / 53 Kb
DokumentenspracheEnglisch

LIMITING VALUES. SYMBOL. PARAMETER. CONDITIONS. MIN. MAX. UNIT. THERMAL CHARACTERISTICS. VALUE. Note

LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT THERMAL CHARACTERISTICS VALUE Note

Modelllinie für dieses Datenblatt

Textversion des Dokuments

Philips Semiconductors Product specification NPN medium power transistor 2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 7 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W Tcase = 100 °C − 1.7 W Tcase ≤ 25 °C − 3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 218 K/W Rth j-c thermal resistance from junction to case 58.3 K/W
Note
1. Refer to TO-39 standard mounting conditions. 1997 Apr 11 3 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT5/11 DEFINITIONS LIFE SUPPORT APPLICATIONS