Philips Semiconductors Product specification NPN medium power transistor 2N1613 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 7 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W Tcase = 100 °C − 1.7 W Tcase ≤ 25 °C − 3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICSSYMBOLPARAMETERCONDITIONSVALUEUNIT Rth j-a thermal resistance from junction to ambient note 1 218 K/W Rth j-c thermal resistance from junction to case 58.3 K/W Note 1. Refer to TO-39 standard mounting conditions. 1997 Apr 11 3 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT5/11 DEFINITIONS LIFE SUPPORT APPLICATIONS