Datasheet BUT56, BUT56A (Inchange Semiconductor) - 2

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A CHARACTERISTICS Tj=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BUT56 400 Collector-emitter V(BR)CEO I V breakdown voltage C=100mA ;LC=125mH BUT56A 450 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V VCE=800V; VBE=0 1.0 BUT56 Tj=150℃ 2.0 Collector ICES mA cut-off current VCE=1000V; VBE=0 1.0 BUT56A Tj=150℃ 2.0 hFE-1 DC current gain IC=1A ; VCE=5V 15 45 BUT56 IC=4A ; VCE=5V 5.5 hFE-2 DC current gain BUT56A IC=3A ; VCE=2V 4 fT Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz 10 MHz Switching times toff Turn-off time 4 μs IC=4A ;IB1=-IB2=1.25A tp=20μs tf Fall time 1 μs 2