Datasheet IRFZ48Z (Inchange Semiconductor) - 2
| Hersteller | Inchange Semiconductor |
| Beschreibung | N-Channel MOSFET Transistor in TO-220 package |
| Seiten / Seite | 2 / 2 — INCHANGE Semiconductor. isc N-Channel MOSFET Transistor. IRFZ48Z. … |
| Dateiformat / Größe | PDF / 397 Kb |
| Dokumentensprache | Englisch |
INCHANGE Semiconductor. isc N-Channel MOSFET Transistor. IRFZ48Z. IIRFZ48Z. ELECTRICAL CHARACTERISTICS TC=25
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z
，
IIRFZ48Z ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 55 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=37A 11 mΩ IGSS Gate-Source Leakage Current VGS=±20V ±0.2 μA IDSS Drain-Source Leakage Current VDS=55V; VGS= 0V 20 μA VSD Diode forward voltage IS =37A, VGS = 0 V 1.3 V
isc website
：
www.iscsemi.cn
2
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor IRFZ48Z isc N-Channel MOSFET Transistor IRFZ48
，
IIRFZ48Z ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 55 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=37A 11 mΩ IGSS Gate-Source Leakage Current VGS=±20V ±0.2 μA IDSS Drain-Source Leakage Current VDS=55V; VGS= 0V 20 μA VSD Diode forward voltage IS =37A, VGS = 0 V 1.3 V
isc website
：
www.iscsemi.cn
2
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor IRFZ48Z isc N-Channel MOSFET Transistor IRFZ48