Datasheet IRFZ48Z (Inchange Semiconductor)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z
，
IIRFZ48Z
·
FEATURES
·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·
DESCRITION
·reliable device for use in a wide variety of applications ·
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 61 A IDM Drain Current-Single Pulsed 240 A PD Total Dissipation @TC=25℃ 91 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Channel-to-case thermal resistance Rth(ch-c) 1.64 ℃/W Channel-to-ambient thermal resistance Rth(ch-a) 62 ℃/W
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Document Outline isc N-Channel MOSFET Transistor IRFZ48Z isc N-Channel MOSFET Transistor IRFZ48