Datasheet DXTP80060DFGQ (Diodes) - 6
| Hersteller | Diodes |
| Beschreibung | PNP, 60V, 6A in PowerDI3333-8/SWP package |
| Seiten / Seite | 8 / 6 — DXTP80060DFGQ. Typical Electrical Characteristics. Fig. 13 R. v I. Fig. … |
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| Dokumentensprache | Englisch |
DXTP80060DFGQ. Typical Electrical Characteristics. Fig. 13 R. v I. Fig. 14 R. v T. CE(sat). amb. Fig. 15 Switching Performance
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DXTP80060DFGQ Typical Electrical Characteristics
(continued) (@TA = +25°C, unless otherwise specified.) 1000 60 T I =3.5A a=25°C CE 55 50 ) Ic/Ib=20 ) msΩ Ω 45 h ms Ic/Ib=50 h (m mO (m t) ( 100 t) 40 ) mO sa t ( sa( sa ) ( t Ic/Ib=20 CE CE sa 35 ( R CE R R CE Ic/Ib=10 Ic/Ib=10 R 30 25 10 20 0.1 1 10 20 40 60 80 100 120 140 160 -I Collector Current (A) C Ambient Temperature (°C)
Fig. 13 R v I Fig. 14 R v T CE(sat) C CE(sat) amb
I /I =10. Vcc=10V C B 1,000 ts )sn( 100 me t i r T td tf 10 0.01 0.1 1 10 -I Collector Current (A) C
Fig. 15 Switching Performance
DXTP80060DFGQ 6 of 8 August 2025 Document number: DS46955 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(continued) (@TA = +25°C, unless otherwise specified.) 1000 60 T I =3.5A a=25°C CE 55 50 ) Ic/Ib=20 ) msΩ Ω 45 h ms Ic/Ib=50 h (m mO (m t) ( 100 t) 40 ) mO sa t ( sa( sa ) ( t Ic/Ib=20 CE CE sa 35 ( R CE R R CE Ic/Ib=10 Ic/Ib=10 R 30 25 10 20 0.1 1 10 20 40 60 80 100 120 140 160 -I Collector Current (A) C Ambient Temperature (°C)
Fig. 13 R v I Fig. 14 R v T CE(sat) C CE(sat) amb
I /I =10. Vcc=10V C B 1,000 ts )sn( 100 me t i r T td tf 10 0.01 0.1 1 10 -I Collector Current (A) C
Fig. 15 Switching Performance
DXTP80060DFGQ 6 of 8 August 2025 Document number: DS46955 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.