Datasheet DXTP80060DFGQ (Diodes) - 5
| Hersteller | Diodes |
| Beschreibung | PNP, 60V, 6A in PowerDI3333-8/SWP package |
| Seiten / Seite | 8 / 5 — DXTP80060DFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 … |
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| Dokumentensprache | Englisch |
DXTP80060DFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTP80060DFGQ Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 800 1 V =-2V I /I =20 C B CE 700 150°C 600 85°C 500 ) 150°C ni V a ( ) G 400 25°C t 0.1 85°C sa( h
FE
CE 300 -55°C -V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1.0 T 1 a=25°C V =-2V CE -55°C 0.8 I /I =50 ) 25°C C B V 0.1 ) 0.6 ( ) V t ( sa ( )no( 85°C CE E B 0.4 -V I /I =10 0.01 C B -V 150°C I /I =20 C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.0 I /I =20 C B f=1MHz -55°C 0.8 ) 25°C pF( ) V 0.6 ce ( 85°C Cibo )t an 100 sa t ( E B 0.4 150°C aci -V ap C Cobo 0.2 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 50 60 -I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTP80060DFGQ 5 of 8 August 2025 Document number: DS46955 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 800 1 V =-2V I /I =20 C B CE 700 150°C 600 85°C 500 ) 150°C ni V a ( ) G 400 25°C t 0.1 85°C sa( h
FE
CE 300 -55°C -V 200 25°C 100 -55°C 0 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1.0 T 1 a=25°C V =-2V CE -55°C 0.8 I /I =50 ) 25°C C B V 0.1 ) 0.6 ( ) V t ( sa ( )no( 85°C CE E B 0.4 -V I /I =10 0.01 C B -V 150°C I /I =20 C B 0.2 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -I Collector Current (A) -I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.0 I /I =20 C B f=1MHz -55°C 0.8 ) 25°C pF( ) V 0.6 ce ( 85°C Cibo )t an 100 sa t ( E B 0.4 150°C aci -V ap C Cobo 0.2 0.0 10 0.001 0.01 0.1 1 10 0 10 20 30 40 50 60 -I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTP80060DFGQ 5 of 8 August 2025 Document number: DS46955 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.