Datasheet TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG (PNP) (ON Semiconductor) - 5

TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP)
500 2.0 TS) 300 T T J = 150°C VCE = 2.0 V J = 25°C 1.6 TAGE (VOL GAIN 25°C 100 I 1.0 A 3.0 A 70 1.2 C = 0.3 A -55°C 50 30 0.8 , DC CURRENT OR-EMITTER VOL FEh 0.4 10 , COLLECT 7.0 CE 5.0 V 0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 I I C, COLLECTOR CURRENT (AMP) B, BASE CURRENT (mA)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.4 +2.5 T C) J = 25°C ° +2.0 *APPLIES FOR I 1.2 C/IB ≤ hFE/2 +1.5 TJ = -65°C TO +150°C 1.0 TS) +1.0 +0.5 *q 0.8 VC FOR VCE(sat) VBE(sat) @ IC/IB = 10 0 TAGE (VOL 0.6 V -0.5 BE @ VCE = 2.0 V , VOL TURE COEFFICIENTS (mV/ V 0.4 -1.0 -1.5 qVB FOR VBE 0.2 VCE(sat) @ IC/IB = 10 , TEMPERA -2.0 Vθ 0 -2.5 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I I C, COLLECTOR CURRENT (AMPS) C, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages Figure 11. Temperature Coefficients
103 107 VCE = 30 V V 102 ANCE (OHMS) CE = 30 V I μ C = 10 x ICES 106 (A) TJ = 150°C 101 I 105 C ≈ ICES 100 100°C OR CURRENT 104 IC = 2 x ICES 10-1 REVERSE FORWARD BASE-EMITTER RESIST , COLLECT 103 I C 10-2 25°C (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) ICES , EXTERNAL 10-3 102 BE -0.4 -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 R 20 40 60 80 100 120 140 160 V T BE, BASE−EMITTER VOLTAGE (VOLTS) J, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance www.onsemi.com 5