Datasheet TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG (PNP) (ON Semiconductor) - 4
| Hersteller | ON Semiconductor |
| Beschreibung | NPN Bipolar Power Transistor in TO-220-3 package |
| Seiten / Seite | 7 / 4 — TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,. … |
| Dateiformat / Größe | PDF / 82 Kb |
| Dokumentensprache | Englisch |
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,. TIP32CG (PNP). Figure 4. Thermal Response
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TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP)
1.0 0.7 D = 0.5 0.5 (NORMALIZED) 0.3 ANCE 0.2 0.2 0.1 RESIST 0.1 P Z (pk) 0.05 qJC(t) = r(t) RqJC 0.07 RqJC(t) = 3.125°C/W MAX 0.05 D CURVES APPLY FOR POWER 0.02 THERMAL PULSE TRAIN SHOWN 0.03 t1 READ TIME AT t1 t2 0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 , TRANSIENT 0.01 r(t) 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms)
Figure 4. Thermal Response
10 There are two limitations on the power handling ability of a transistor: average junction temperature and second 5.0 breakdown. Safe operating area curves indicate I 100ms C − VCE (AMP) limits of the transistor that must be observed for reliable 5.0ms 2.0 operation; i.e., the transistor must not be subjected to greater 1.0ms dissipation than the curves indicate. SECONDARY BREAKDOWN 1.0 The data of Figure 5 is based on TJ(pk) = 150°C; TC is OR CURRENT LIMITED @ TJ ≤ 150°C variable depending on conditions. Second breakdown pulse 0.5 THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk) BONDING WIRE LIMIT ≤ 150°C. T , COLLECT J(pk) may be calculated from the data in Figure 4. I C 0.2 CURVES APPLY TIP31A, TIP32A At high case temperatures, thermal limitations will reduce BELOW RATED V TIP31B, TIP32B CEO the power that can be handled to values less than the TIP31C, TIP32C 0.1 limitations imposed by second breakdown. 5.0 10 20 50 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0 300 2.0 IB1 = IB2 TJ = +25°C t IC/IB = 10 s′ 200 t 1.0 s′ = ts - 1/8 tf tf @ VCC = 30 V TJ = 25°C 0.7 0.5 (s)μ 0.3 ANCE (pF) 100 tf @ VCC = 10 V Ceb t, TIME 0.2 ACIT 70 CAP 0.1 0.07 50 Ccb 0.05 0.03 30 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time Figure 7. Capacitance www.onsemi.com 4
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP)
1.0 0.7 D = 0.5 0.5 (NORMALIZED) 0.3 ANCE 0.2 0.2 0.1 RESIST 0.1 P Z (pk) 0.05 qJC(t) = r(t) RqJC 0.07 RqJC(t) = 3.125°C/W MAX 0.05 D CURVES APPLY FOR POWER 0.02 THERMAL PULSE TRAIN SHOWN 0.03 t1 READ TIME AT t1 t2 0.02 0.01 TJ(pk) - TC = P(pk) ZqJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 , TRANSIENT 0.01 r(t) 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms)
Figure 4. Thermal Response
10 There are two limitations on the power handling ability of a transistor: average junction temperature and second 5.0 breakdown. Safe operating area curves indicate I 100ms C − VCE (AMP) limits of the transistor that must be observed for reliable 5.0ms 2.0 operation; i.e., the transistor must not be subjected to greater 1.0ms dissipation than the curves indicate. SECONDARY BREAKDOWN 1.0 The data of Figure 5 is based on TJ(pk) = 150°C; TC is OR CURRENT LIMITED @ TJ ≤ 150°C variable depending on conditions. Second breakdown pulse 0.5 THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk) BONDING WIRE LIMIT ≤ 150°C. T , COLLECT J(pk) may be calculated from the data in Figure 4. I C 0.2 CURVES APPLY TIP31A, TIP32A At high case temperatures, thermal limitations will reduce BELOW RATED V TIP31B, TIP32B CEO the power that can be handled to values less than the TIP31C, TIP32C 0.1 limitations imposed by second breakdown. 5.0 10 20 50 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
3.0 300 2.0 IB1 = IB2 TJ = +25°C t IC/IB = 10 s′ 200 t 1.0 s′ = ts - 1/8 tf tf @ VCC = 30 V TJ = 25°C 0.7 0.5 (s)μ 0.3 ANCE (pF) 100 tf @ VCC = 10 V Ceb t, TIME 0.2 ACIT 70 CAP 0.1 0.07 50 Ccb 0.05 0.03 30 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time Figure 7. Capacitance www.onsemi.com 4