Datasheet IRGPS60B120KDP (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| Seiten / Seite | 12 / 6 — Fig. 13. Fig. 14. Fig. 15. Fig. 16 |
| Dateiformat / Größe | PDF / 142 Kb |
| Dokumentensprache | Englisch |
Fig. 13. Fig. 14. Fig. 15. Fig. 16
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRGPS60B120KDP 12000 1000 10000 tdOFF ) 8000 s ) n J ( µ( E e OFF y mi 6000 g T r 100 tdON e g n ni E h t 4000 c E i F ON w S 2000 tR 0 10 0 20 40 60 80 100 20 40 60 80 100 IC (A) IC (A)
Fig. 13
- Typ. Energy Loss vs. I
Fig. 14
- Typ. Switching Time vs. I C C T T J = 125°C; L=200µH; VCE= 600V J = 125°C; L=200µH; VCE= 600V R R G= 4.7Ω; VGE= 15V G= 4.7Ω; VGE= 15V 25000 10000 tdOFF 20000 EON ) s 1000 ) n( J 15000 µ e ( m y i g T r tdON e EOFF g n ni 10000 t E h c R i w 100 S tF 5000 0 10 0 50 100 150 0 50 100 150 RG (Ω) RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
Fig. 16
- Typ. Switching Time vs. R G G T T J = 125°C; L=200µH; VCE= 600V J = 125°C; L=200µH; VCE= 600V I I CE= 60A; VGE= 15V CE= 60A; VGE= 15V 6 www.irf.com
Fig. 13
- Typ. Energy Loss vs. I
Fig. 14
- Typ. Switching Time vs. I C C T T J = 125°C; L=200µH; VCE= 600V J = 125°C; L=200µH; VCE= 600V R R G= 4.7Ω; VGE= 15V G= 4.7Ω; VGE= 15V 25000 10000 tdOFF 20000 EON ) s 1000 ) n( J 15000 µ e ( m y i g T r tdON e EOFF g n ni 10000 t E h c R i w 100 S tF 5000 0 10 0 50 100 150 0 50 100 150 RG (Ω) RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
Fig. 16
- Typ. Switching Time vs. R G G T T J = 125°C; L=200µH; VCE= 600V J = 125°C; L=200µH; VCE= 600V I I CE= 60A; VGE= 15V CE= 60A; VGE= 15V 6 www.irf.com