Datasheet 2N6241 (Digitron Semiconductors) - 2
| Hersteller | Digitron Semiconductors |
| Beschreibung | 2.6A Silicon Controlled Rectifier |
| Seiten / Seite | 4 / 2 — High-reliability discrete products. and engineering services since 1977. … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
High-reliability discrete products. and engineering services since 1977. ELECTRICAL CHARACTERISTICS (. Characteristic. Symbol
Modelllinie für dieses Datenblatt
Textversion des Dokuments
2N6236-2N6241
High-reliability discrete products
SILICON CONTROLLED RECTIFIERS
and engineering services since 1977 ELECTRICAL CHARACTERISTICS (
TC = 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Peak forward or reverse blocking current
(Rated VDRM or VRRM) TC = 25°C IDRM, IRRM - - 10 µA TC = 110°C - - 200
Peak forward “on” voltage
V Volts (I TM TM = 8.2A peak, pulse width = 1 to 2ms, 2% duty cycle) - - 2.2
Gate trigger current (continuous dc)
IGT µA (VAK = 12Vdc, RL = 24Ω) - - 200 (VAK = 12Vdc, RL = 24Ω, TC = -40°C) - - 500
Gate trigger voltage (continuous dc)
VGT Volts (Source voltage = 12V, RS = 50Ω) - - 1 (VAK = 12Vdc, RL = 24Ω, TC = -40°C)
Gate non-trigger voltage
VGD Volts (VAK = rated VDRM, RL = 100Ω, TC = 110°C) 0.2 - -
Holding current
IH mA (VAK = 12Vdc, IGT = 2mA) (initiating on state current = 200mA) TC = 25°C - - 5 TC = -40°C - - 10
Total turn-on time
tgt µs (Source voltage = 12V, RS = 6kΩ) - - 2 (ITM = 8.2A, IGT = 2mA, rated VDRM) (Rise time = 20ns, pulse width = 10µs)
Forward voltage application rate
dv/dt V/µs (VD = Rated VDRM, TC = 110°C) - 10 - Rev. 20130128
High-reliability discrete products
SILICON CONTROLLED RECTIFIERS
and engineering services since 1977 ELECTRICAL CHARACTERISTICS (
TC = 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Peak forward or reverse blocking current
(Rated VDRM or VRRM) TC = 25°C IDRM, IRRM - - 10 µA TC = 110°C - - 200
Peak forward “on” voltage
V Volts (I TM TM = 8.2A peak, pulse width = 1 to 2ms, 2% duty cycle) - - 2.2
Gate trigger current (continuous dc)
IGT µA (VAK = 12Vdc, RL = 24Ω) - - 200 (VAK = 12Vdc, RL = 24Ω, TC = -40°C) - - 500
Gate trigger voltage (continuous dc)
VGT Volts (Source voltage = 12V, RS = 50Ω) - - 1 (VAK = 12Vdc, RL = 24Ω, TC = -40°C)
Gate non-trigger voltage
VGD Volts (VAK = rated VDRM, RL = 100Ω, TC = 110°C) 0.2 - -
Holding current
IH mA (VAK = 12Vdc, IGT = 2mA) (initiating on state current = 200mA) TC = 25°C - - 5 TC = -40°C - - 10
Total turn-on time
tgt µs (Source voltage = 12V, RS = 6kΩ) - - 2 (ITM = 8.2A, IGT = 2mA, rated VDRM) (Rise time = 20ns, pulse width = 10µs)
Forward voltage application rate
dv/dt V/µs (VD = Rated VDRM, TC = 110°C) - 10 - Rev. 20130128