Datasheet 2N6241 (Digitron Semiconductors)
| Hersteller | Digitron Semiconductors |
| Beschreibung | 2.6A Silicon Controlled Rectifier |
| Seiten / Seite | 4 / 1 — High-reliability discrete products. and engineering services since 1977. … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
High-reliability discrete products. and engineering services since 1977. FEATURES. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
Modelllinie für dieses Datenblatt
Textversion des Dokuments
2N6236-2N6241
High-reliability discrete products
SILICON CONTROLLED RECTIFIERS
and engineering services since 1977 FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage
(1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 30 2N6237 VDRM 50 Volts 2N6238 VRRM 100 2N6239 200 2N6240 400 2N6241 600
Non-repetitive peak reverse blocking voltage
(1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 50 2N6237 100 V Volts 2N6238 RSM 150 2N6239 250 2N6240 450 2N6241 650
Average on-state current
(TC = -40 to +90°C) IT(AV) 2.6 Amps (TC = 100°C) 1.6
Surge on-state current
(1/2 sine wave, 60Hz, TC = 90°C) ITSM 25 Amps (1/2 sine wave, 1.5ms, TC = 90°C) 35
Circuit fusing
(TC = -40 to +110°C, t = 8.3ms) I2t 2.6 A2s
Peak gate power
(pulse width = 10µs, TC = 90°C) PGM 0.5 Watts
Average gate power
(t = 8.3ms, TC = 90°C) PG(AV) 0.1 Watts
Peak forward gate current
IGM 0.2 Amps
Peak reverse gate voltage
VRGM 6 Volts
Operating junction temperature range
TJ -40 to 110 °C
Storage temperature range
Tstg -40 to 150 °C
Stud torque
6 In. lb. Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal resistance, junction to case
RӨJC 3 °C/W
Thermal resistance, junction to ambient
RӨJA 75 °C/W Rev. 20130128
High-reliability discrete products
SILICON CONTROLLED RECTIFIERS
and engineering services since 1977 FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage
(1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 30 2N6237 VDRM 50 Volts 2N6238 VRRM 100 2N6239 200 2N6240 400 2N6241 600
Non-repetitive peak reverse blocking voltage
(1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 50 2N6237 100 V Volts 2N6238 RSM 150 2N6239 250 2N6240 450 2N6241 650
Average on-state current
(TC = -40 to +90°C) IT(AV) 2.6 Amps (TC = 100°C) 1.6
Surge on-state current
(1/2 sine wave, 60Hz, TC = 90°C) ITSM 25 Amps (1/2 sine wave, 1.5ms, TC = 90°C) 35
Circuit fusing
(TC = -40 to +110°C, t = 8.3ms) I2t 2.6 A2s
Peak gate power
(pulse width = 10µs, TC = 90°C) PGM 0.5 Watts
Average gate power
(t = 8.3ms, TC = 90°C) PG(AV) 0.1 Watts
Peak forward gate current
IGM 0.2 Amps
Peak reverse gate voltage
VRGM 6 Volts
Operating junction temperature range
TJ -40 to 110 °C
Storage temperature range
Tstg -40 to 150 °C
Stud torque
6 In. lb. Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal resistance, junction to case
RӨJC 3 °C/W
Thermal resistance, junction to ambient
RӨJA 75 °C/W Rev. 20130128