Datasheet CLP24H4S30P (Ampleon) - 8
| Hersteller | Ampleon |
| Beschreibung | RF power GaN-SiC HEMT |
| Seiten / Seite | 11 / 8 — CLP24H4S30P. RF power GaN-SiC HEMT. 9. Handling. information. CAUTION. … |
| Dateiformat / Größe | PDF / 1.4 Mb |
| Dokumentensprache | Englisch |
CLP24H4S30P. RF power GaN-SiC HEMT. 9. Handling. information. CAUTION. Table 11. ESD sensitivity. ESD model. Class. 10. Abbreviations
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CLP24H4S30P RF power GaN-SiC HEMT 9. Handling information CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
Table 11. ESD sensitivity ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2B Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1A
10. Abbreviations Table 12. Abbreviations Acronym Description
CW Continuous Wave GaN Gallium Nitride HEMT High Electron Mobility Transistor MTF Median Time to Failure RoHS Restriction of Hazardous Substances SiC Silicon Carbide W-CDMA Wideband Code Division Multiple Access
11. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes
CLP24H4S30P v.1 20240723 Product data sheet - - CLP24H4S30P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 23 July 2024 8 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
Table 11. ESD sensitivity ESD model Class
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002 C2B Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001 1A
10. Abbreviations Table 12. Abbreviations Acronym Description
CW Continuous Wave GaN Gallium Nitride HEMT High Electron Mobility Transistor MTF Median Time to Failure RoHS Restriction of Hazardous Substances SiC Silicon Carbide W-CDMA Wideband Code Division Multiple Access
11. Revision history Table 13. Revision history Document ID Release date Data sheet status Change notice Supersedes
CLP24H4S30P v.1 20240723 Product data sheet - - CLP24H4S30P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 23 July 2024 8 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents