Datasheet CLP24H4S30P (Ampleon) - 2
Hersteller | Ampleon |
Beschreibung | RF power GaN-SiC HEMT |
Seiten / Seite | 11 / 2 — CLP24H4S30P. RF power GaN-SiC HEMT. 2. Pinning. information. 2.1 Pinning. … |
Dateiformat / Größe | PDF / 1.4 Mb |
Dokumentensprache | Englisch |
CLP24H4S30P. RF power GaN-SiC HEMT. 2. Pinning. information. 2.1 Pinning. Fig 1. Pin configuration. 2.2 Pin description. Table 2

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Textversion des Dokuments
CLP24H4S30P RF power GaN-SiC HEMT 2. Pinning information 2.1 Pinning
pin 1 index gate1 1 6 drain1 n.c. 2 5 n.c. gate2 3 4 drain2 amp01499 Transparent top view The exposed backside of the package is the ground terminal of the device.
Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description
gate1 1 gate 1 n.c. 2 not connected gate2 3 gate 2 drain2 4 drain 2 n.c. 5 not connected drain1 6 drain 1
3. Ordering information Table 3. Ordering information Package name Orderable part number 12NC Packing description Min. orderable quantity (pieces)
DFN-7x6.5-6-1 CLP24H4S30PZ 934960709515 TR7, 1000-fold, 16mm, Dry Pack 1000 DFN-7x6.5-6-1 CLP24H4S30PXY 934960709538 TR7, 100-fold, 16mm, Dry Pack 100 CLP24H4S30P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 23 July 2024 2 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents