Datasheet CLP24H4S30P (Ampleon) - 3
Hersteller | Ampleon |
Beschreibung | RF power GaN-SiC HEMT |
Seiten / Seite | 11 / 3 — CLP24H4S30P. RF power GaN-SiC HEMT. 4. Limiting. values. Table 4. … |
Dateiformat / Größe | PDF / 1.4 Mb |
Dokumentensprache | Englisch |
CLP24H4S30P. RF power GaN-SiC HEMT. 4. Limiting. values. Table 4. Limiting values. Symbol. Parameter. Conditions. Min Max. Unit. 5. Thermal

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CLP24H4S30P RF power GaN-SiC HEMT 4. Limiting values Table 4. Limiting values Symbol Parameter Conditions Min Max Unit
VDD supply voltage operating - 52 V VDS drain-source voltage VGS = 8 V - 150 V VGS(amp) amplifier gate-source voltage 15 +2 V IGF(amp) amplifier forward gate current - 3.2 mA Tstg storage temperature 65 +150 C Tch active die channel temperature - 225 C
5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit
Rth(ch-top)(FEA) [1] thermal resistance from active die channel to top of Pdis = 8 W; 6.12 K/W package by Finite Element Analysis Tcase = 65 C Rth(ch-c)(FEA) [1] thermal resistance from active die channel to case Pdis = 8 W; 5.7 K/W by Finite Element Analysis Tcase = 65 C [1] The device is mounted on a PCB with copper filled vias underneath the grounding pad of the device, with the PCB mounted on a cooling surface. The ambient temperature is 25 C. [2] Finite Element Analysis (FEA) thermal values have been used for the online MTF calculator.
6. Characteristics Table 6. DC characteristics
Single section DC characteristics; Tamb = 25 C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 3.2 mA 3.5 2.8 2.2 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 64 mA 3.05 2.6 2.05 V ID(leak) drain leakage current VGS = 10 V; VDS = 50 V - - 0.774 mA IGSS gate leakage current VGS = 8 V; VDS = 0 V - - 0.155 mA IDSX drain cut-off current VDS = 20 V; VGS = 2 V - 2.68 - A
Table 7. RF characteristics
Test signal: pulsed at f = 2450 MHz; RF performance at VDS = 50 V; tp = 50 s; = 2 %; IDq = 5 mA; Tamb = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 30 W - 18.4 - dB RLin input return loss PL = 30 W - 8 - dB D drain efficiency PL = 30 W - 61 - % CLP24H4S30P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 23 July 2024 3 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents