Datasheet CLF24H4LS300P (Ampleon)
| Hersteller | Ampleon |
| Beschreibung | RF power GaN-SiC HEMT |
| Seiten / Seite | 11 / 1 — CLF24H4LS300P RF power GaN-SiC HEMT Rev. 1 — 30 July 2024. Product data … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
CLF24H4LS300P RF power GaN-SiC HEMT Rev. 1 — 30 July 2024. Product data sheet. 1. Product. profile. 1.1 General description
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CLF24H4LS300P RF power GaN-SiC HEMT Rev. 1 — 30 July 2024 Product data sheet 1. Product profile 1.1 General description
300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is designed for high-power CW applications and is assembled in a high performance ceramic package.
Table 1. Application performance
RF performance at VDS = 50 V; VGS = 5 V; Tamb = 25 C in a class-AB/class-C application circuit.
Test signal f VDS PL(AV) Gp
D (MHz) (V) (W) (dB) (%)
CW 2400 to 2500 50 320 14 74 CW pulsed [1] 2400 to 2500 50 350 14 75 [1] tp = 100 s; = 10 %
1.2 Features and benefits
High efficiency Excellent ruggedness under CW and CW pulsed conditions Designed for broadband operation (2400 MHz to 2500 MHz) Internally input matched For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as commercial and consumer cooking, industrial, scientific and medical applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
CLF24H4LS300P RF power GaN-SiC HEMT Rev. 1 — 30 July 2024 Product data sheet 1. Product profile 1.1 General description
300 W GaN-SiC HEMT power transistor optimized with best continuous wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P is designed for high-power CW applications and is assembled in a high performance ceramic package.
Table 1. Application performance
RF performance at VDS = 50 V; VGS = 5 V; Tamb = 25 C in a class-AB/class-C application circuit.
Test signal f VDS PL(AV) Gp
D (MHz) (V) (W) (dB) (%)
CW 2400 to 2500 50 320 14 74 CW pulsed [1] 2400 to 2500 50 350 14 75 [1] tp = 100 s; = 10 %
1.2 Features and benefits
High efficiency Excellent ruggedness under CW and CW pulsed conditions Designed for broadband operation (2400 MHz to 2500 MHz) Internally input matched For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as commercial and consumer cooking, industrial, scientific and medical applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents