Datasheet VIA2000SD (Vishay) - 2

VIA2000SD
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
Power supply voltage VDD1, VDD2 -0.3 to 6.5 V VIN GND1-6 to VDD1+0.5 V Input voltage SHTDN GND1-0.5 to VDD1+0.5 V Output voltage OUTP, OUTN GND2-0.5 to VDD2+0.5 V Output current per output pin IO -10 to +10 mA Operating temperature Tamb -40 to +125 °C Junction temperature Tj -40 to +150 °C Storage temperature Tstg -55 to +150 °C HBM (1) ± 2000 V Electrostatic discharge CDM (2) ± 1000 V
Notes
(1) Human body model (HBM), per AEC-Q100-002-RevD (2) Charged device model (CDM), per AEC-Q100-011-RevB
FUNCTIONAL BLOCK DIAGRAM
VDD1 VDD2 VDD1 detection Reference Reference OUTP Low pass V Buffer Σ-Δ modulator IN TX RX filter OUTN Isolation Barrier SHTDN RX TX Oscillator GND1 GND2 Fig. 1 - VIA2000SD Block Diagram
RECOMMENDED OPERATING CONDITIONS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Side 1 power supply VDD1 3.0 5.0 5.5 V Side 2 power supply VDD2 3.0 3.3 5.5 V Differential input voltage V before clipping output clipping - 2.56 - V VIA2000SD Linear differential input full V scale voltage FSR 0.02 - 2 V Digital input voltage SHTDN GND1 - VDD1 Operating ambient temperature Tamb -40 - +125 °C Rev. 1.1, 02-Apr-2025
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