Datasheet FS8205A (Fortune Semiconductor) - 4

FS8205A 6. Thermal Data
Symbol Parameter Rthj-a 7. Value Thermal Resistance Junction-ambient3 Max. Unit
℃/W 125 Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )
Symbol Parameter Test Conditions Min. Typ. Max. Units FO
Fo P R
r R ro TU
ef pe NE
er rti
’
e
en s
ce
O
nl
y Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 -V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA -0.1 -V/℃ VGS = 4.5V, ID = 4A -23 28 mΩ VGS = 2.5V, ID = 3A -30 37 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA 0.45 -1.2 V Drain-Source Leakage Current (Tj = 25℃) VDS =16V, VGS = 0V -1 uA Drain-Source Leakage Current (Tj = 70℃) VDS =16V, VGS = 0V -25 uA Gate-Source Leakage VGS = ±10V -±0.1 uA Min.
-Typ.
-Max.
0.83
1.2 Units
A
V 2 RDS(ON) Static Drain-Source On-Resistance VGS(th)
IDSS IGSS 8. Source-Drain Diode Symbol
IS
VSD Parameter Continuous Source Current (Body Diode) Forward On Voltage 2 Test Conditions
VD = VG = 0V, VS = 1.2V
Tj = 25℃, IS = 1.25A, VGS = 0V Notes： 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≦ 300us, duty cycle ≦ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board；208℃/W when mounted on Min. copper
pad. Rev. 1.8 4/6