Datasheet FS8205A (Fortune Semiconductor) - 3
| Hersteller | Fortune Semiconductor |
| Beschreibung | Dual N-Channel Power MOSFET |
| Seiten / Seite | 6 / 3 |
| Dateiformat / Größe | PDF / 775 Kb |
| Dokumentensprache | Englisch |
Modelllinie für dieses Datenblatt
Textversion des Dokuments
FS8205A 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2. Applications
Li-ion battery management applications FO
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y 3. Ordering Information Product Number Description Package Type Quantity/Reel FS8205A TSSOP8 package version TSSOP-8 4,000 4. Pin Assignment FS8205A
ABCCC A：A~Z or A ~ Z
B：A~Z or A ~ Z
C：A~Z or A ~ Z or 0~9
ABCCC : Lot no information 5. Absolute Maximum Ratings
Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6 A ID @TA = 70℃ Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A PD @TA = 25℃ Total Power Dissipation 1 W Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rev. 1.8 3/6
Li-ion battery management applications FO
Fo P R
r R ro TU
ef pe NE
er rti
’
e
en s
ce
O
nl
y 3. Ordering Information Product Number Description Package Type Quantity/Reel FS8205A TSSOP8 package version TSSOP-8 4,000 4. Pin Assignment FS8205A
ABCCC A：A~Z or A ~ Z
B：A~Z or A ~ Z
C：A~Z or A ~ Z or 0~9
ABCCC : Lot no information 5. Absolute Maximum Ratings
Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6 A ID @TA = 70℃ Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A PD @TA = 25℃ Total Power Dissipation 1 W Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rev. 1.8 3/6