Datasheet AOK20B135D1 (Alpha & Omega)
| Hersteller | Alpha & Omega |
| Beschreibung | 1350V, 20A Alpha IGBT with Diode |
| Seiten / Seite | 8 / 1 — AOK20B135D1. 1350V, 20A Alpha IGBT TM with Diode. General Description. … |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
AOK20B135D1. 1350V, 20A Alpha IGBT TM with Diode. General Description. Product Summary. Applications. Top V. i w. TO-2. - 47. A K20B135D1
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AOK20B135D1 1350V, 20A Alpha IGBT TM with Diode General Description Product Summary
• Latest AlphaIGBT (α IGBT) technology VCE • Best in Class V 1350V CE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time IC (TC=100°C) 20A • Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25°C) 1.57V • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance
Applications
• Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications
Top V ie i w
C
TO-2 - 47
G E E C
AO A K20B135D1
G
Orde d rabl b e Part t Nu N m u be b r Package g Ty T p y e p Fo F r o m Mini n mum u Orde d r Qua u nt n i t ty t
AOK20B135D1 TO247 Tube 240
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOK20B135D1 Units
Collector-Emitter Voltage V CE 1350 V Gate-Emitter Voltage ±20 V V GE Transient Voltage (tp 1µs,D 0.025) ≤ ＜ ±30 Continuous Collector TC=25°C 40 I C A Current TC=100°C 20 Pulsed Collector Current, Limited by TJmax I Cpulse 80 A Turn off SOA, VCE 600V, Limited by T ≤ Jmax I LM 80 A Continuous Diode TC=25°C 40 I F A Forward Current TC=100°C 20 Diode Pulsed Current, Limited by TJmax I Fpulse 80 A TC=25°C 340 P D W Power Dissipation TC=100°C 170 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 °C
Thermal Characteristics Parameter Symbol AOK20B135D1 Units
Maximum Junction-to-Ambient R θ JA 40 °C/W Maximum IGBT Junction-to-Case R θ JC 0.44 °C/W Maximum Diode Junction-to-Case R θ JC 1.20 °C/W Rev.1.0: April 2014
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Page 1 of 8
• Latest AlphaIGBT (α IGBT) technology VCE • Best in Class V 1350V CE(SAT) enables high efficiencies • Low turn-off switching loss due to fast turn-off time IC (TC=100°C) 20A • Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25°C) 1.57V • Better thermal management • High surge current capability • Minimal gate spike due to high input capacitance
Applications
• Induction Cooking • Rice Cookers • Microwave Ovens • Other soft switching applications
Top V ie i w
C
TO-2 - 47
G E E C
AO A K20B135D1
G
Orde d rabl b e Part t Nu N m u be b r Package g Ty T p y e p Fo F r o m Mini n mum u Orde d r Qua u nt n i t ty t
AOK20B135D1 TO247 Tube 240
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOK20B135D1 Units
Collector-Emitter Voltage V CE 1350 V Gate-Emitter Voltage ±20 V V GE Transient Voltage (tp 1µs,D 0.025) ≤ ＜ ±30 Continuous Collector TC=25°C 40 I C A Current TC=100°C 20 Pulsed Collector Current, Limited by TJmax I Cpulse 80 A Turn off SOA, VCE 600V, Limited by T ≤ Jmax I LM 80 A Continuous Diode TC=25°C 40 I F A Forward Current TC=100°C 20 Diode Pulsed Current, Limited by TJmax I Fpulse 80 A TC=25°C 340 P D W Power Dissipation TC=100°C 170 Junction and Storage Temperature Range T J , T STG -55 to 175 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds T L 300 °C
Thermal Characteristics Parameter Symbol AOK20B135D1 Units
Maximum Junction-to-Ambient R θ JA 40 °C/W Maximum IGBT Junction-to-Case R θ JC 0.44 °C/W Maximum Diode Junction-to-Case R θ JC 1.20 °C/W Rev.1.0: April 2014
www.aosmd.com
Page 1 of 8