Datasheet CM2400HCB-34N (Mitsubishi Electric) - 7

MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE SHORT CIRCUIT REVERSE BIAS SAFE OPERATING AREA SAFE OPERATING AREA (RBSOA) (SCSOA)
6000 40000 VCC ≤ 1200V, VGE = ±15V VCC ≤ 1000V, VGE = ±15V Tj = 125°C, RG (off) ≥ 1.1Ω RG (on) ≥ 0.8Ω, RG (off) ≥ 1.1Ω Tj = 125°C, tpsc ≤ 10µs 5000 ) 30000 ( A ( A 4000 3000 20000 2000 COLLECTOR CURRENT COLLECTOR CURRENT 10000 1000 0 0 0 500 1000 1500 2000 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR-EMITTER VOLTAGE (V)
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA)
3000 VCC ≤ 1200V, di/dt ≤ 9000A/µs Tj = 125°C ) 2500 ( A 2000 1500 1000 REVERSE RECOVERY CURRENT 500 00 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 7