Datasheet CM2400HCB-34N (Mitsubishi Electric) - 2

MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit VCES Collector-emitter voltage VGE = 0V, Tj = 25°C 1700 V VGES Gate-emitter voltage VCE = 0V, Tj = 25°C ± 20 V IC DC, Tc = 80°C 2400 A Collector current ICM Pulse (Note 1) 4800 A IE DC 2400 A Emitter current (Note 2) IEM Pulse (Note 1) 4800 A Pc Maximum power dissipation (Note 3) Tc = 25°C, IGBT part 15600 W Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 4000 V Tj Junction temperature –40 ~ +150 °C Top Operating temperature –40 ~ +125 °C Tstg Storage temperature –40 ~ +125 °C tpsc Maximum short circuit pulse width VCC = 1000V, VCE ≤ VCES, VGE = 15V, Tj = 125°C 10 µs
ELECTRICAL CHARACTERISTICS
Limits Symbol Item Conditions Unit Min Typ Max Tj = 25°C — — 9 ICES Collector cutoff current VCE = VCES, VGE = 0V mA Tj = 125°C — 7.0 18 VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 240 mA, Tj = 25°C 5.5 6.5 7.5 V IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C — — 0.5 µA Cies Input capacitance — 396 — nF Coes Output capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C — 21.6 — nF Cres Reverse transfer capacitance — 6.3 — nF Qg Total gate charge VCC = 900 V, IC = 2400 A, VGE = ±15 V, Tj = 25°C — 27.4 — µC Collector-emitter saturation IC = 2400 A (Note 4) Tj = 25°C — 2.10 2.70 VCE(sat) V voltage VGE = 15 V Tj = 125°C — 2.35 — td(on) Turn-on delay time — — 1.50 µs VCC = 900 V, IC = 2400 A, VGE = ±15 V tr Turn-on rise time — — 0.60 µs RG(on) = 0.8 Ω, Tj = 125°C, Ls = 80 nH Turn-on switching energy Eon(10%) Inductive load — 0.65 — J/P (Note 5) td(off) Turn-off delay time — — 3.00 µs VCC = 900 V, IC = 2400 A, VGE = ±15 V tf Turn-off fall time — — 0.60 µs RG(off) = 1.1 Ω, Tj = 125°C, Ls = 80 nH Turn-off switching energy Eoff(10%) Inductive load — 0.70 — J/P (Note 5) Emitter-collector voltage IE = 2400 A (Note 4) Tj = 25°C — 2.20 3.00 VEC V (Note 2) VGE = 0 V Tj = 125°C — 1.85 — Reverse recovery time trr — — 1.50 µs (Note 2) VCC = 900 V, IE = 2400 A, VGE = ±15 V Reverse recovery charge Qrr RG(on) = 0.8 Ω, Tj = 125°C, Ls = 80 nH — 750 — µC (Note 2) Inductive load Reverse recovery energy Erec(10%) — 0.50 — J/P (Note 2), (Note 5) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 2