Datasheet QSE113, QSE114 (Fairchild) - 3

HerstellerFairchild
BeschreibungPlastic Silicon Infrared Phototransistor
Seiten / Seite4 / 3 — PLASTIC SILICON. INFRARED PHOTOTRANSISTOR. QSE113 QSE114. Figure 1. Light …
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PLASTIC SILICON. INFRARED PHOTOTRANSISTOR. QSE113 QSE114. Figure 1. Light Current vs. Radiant Intensity

PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 Figure 1 Light Current vs Radiant Intensity

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 QSE114 Figure 1. Light Current vs. Radiant Intensity
101
Figure 2. Angular Response Curve
VCE = 5V 90 100 80 GaAs Light Source 110 70 120 60 130 50 140 40 100 150 30 - Light Current (mA) 160 20 I C(ON) 170 10 180 0 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0 10-1 0.1 1 2 Ee - Radiant Intensity (mW/cm )
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
101 101 Ie = 1mW/cm 2 100 Ie = 0.5mW/cm 2 100 Ie = 0.2mW/cm 2 10-1 k Current (nA) ed Light Current Ie = 0.1mW/cm 2 - Dar maliz 10-1 I CEO 10-2 - Nor Normalized to: I L VCE = 5V Ie = 0.5mW/cm2 TA = 25°C 10-3 10-2 0 5 10 15 20 25 30 0.1 1 10 V - Collector-Emitter Voltage (V) V - Collector-Emitter Voltage (V) CE CE
Figure 5. Dark Current vs. Ambient Temperature
104 Normalized to: V = 25V CE V = 25V CE 103 T = 25°C A k Current V = 10V CE 102 ed Dar maliz 101 - Nor 100 I CEO 10-1 25 50 75 100 TA - Ambient Temperature (°C) © 2002 Fairchild Semiconductor Corporation Page 3 of 4 5/1/02