Datasheet CM600DY-24A (Mitsubishi Electric) - 2

MITSUBISHI IGBT MODULES CM600DY-24A
HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
—
—
— (Tj = 25°C, unless otherwise specified) Parameter ICES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG G-E Short
C-E Short
DC, TC = 78°C*1
Pulse Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight ELECTRICAL CHARACTERISTICS
Symbol Conditions Collector-emitter voltage
Gate-emitter voltage (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value Unit
V
V
A
A
W
°C
°C
Vrms
N•m
g (Tj = 25°C, unless otherwise specified) Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage Contact thermal resistance
External gate resistance (Note 2) Pulse
TC = 25°C*1 VCE = VCES, VGE = 0V Min.
— Limits
Typ.
— Max.
1 IC = 60mA, VCE = 10V 6 7 8 V —
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.52 —
2.1
2.4
—
—
—
2700
—
—
—
—
—
19
—
—
—
0.018
— 0.5
3.0
—
94
8
1.8
—
660
190
700
350
250
—
3.8
0.034
0.062
—
7.8 µA Test conditions Parameter Thermal resistance Ratings
1200
±20
600
1200
600
1200
3670
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580 ±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C IC = 600A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A
VGE = ±15V
RG = 0.52Ω, Inductive load
IE = 600A IE = 600A, VGE = 0V
IGBT part (1/2 module)*1
FWDi part (1/2 module)*1
Case to heat sink, Thermal compound Applied (1/2 module)*2 Unit
mA V nF
nC ns ns
µC
V
K/W
Ω *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C. Feb. 2009
2