Datasheet CM600DY-24A (Mitsubishi Electric) - 4

MITSUBISHI IGBT MODULES CM600DY-24A TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103 NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c’) (ratio) REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7
5
3 Irr 2 102 trr 7
5
3
2 101 1
10 2 3 5 7 102 Conditions:
VCC = 600V
VGE = ±15V
RG = 0.52Ω
Tj = 25°C
Inductive load
2 3
5 7 103 IGBT part:
10–2 Per unit base =
7
5 Rth(j–c) = 0.034K/W
FWDi part:
3
Per unit base =
2
Rth(j–c) = 0.062K/W
–3
10 10–2
7
5
3
2 10–3
10–5 2 3 5 710–4 2 3 5 7 10–3 SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
103
7 SWITCHING LOSS (mJ/pulse) Esw(on) 7
5 Esw(off)
3
2 2 3 5 7 102 2 3 Conditions:
VCC = 600V 5 VGE = ±15V IC = 600A
Tj = 125°C
2 Inductive load
C snubber at bus
3 102
7 Esw(on)
Esw(off) 5
3
2 101 –1
10 5 7 103 2 3 5 7 100 2 3 5 7 101 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω) RECOVERY LOSS vs. IE
(TYPICAL) RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL) 102 102 7 7 RECOVERY LOSS (mJ/pulse) SWITCHING LOSS (mJ/pulse) 7
5
3
2 SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
Conditions:
VCC = 600V
5
VGE = ±15V
3 RG = 0.52Ω
2 Tj = 125°C
Inductive load
C snubber at bus
2
10 5 Err 3
2 101
7
5
3
2 100 1
10 10–1 7
5
3
2 TIME (s) 7 RECOVERY LOSS (mJ/pulse) 2 10–1 EMITTER CURRENT IE (A) 103 101 1
10 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
Single Pulse
7
5
TC = 25°C
3
Under the chip 2 3 Conditions:
VCC = 600V
VGE = ±15V
RG = 0.52Ω
Tj = 125°C
Inductive load
C snubber at bus
5 7 102
2 3
5 7 103 5 Err 3
2 101 Conditions:
VCC = 600V
VGE = ±15V
IE = 600A
Tj = 125°C
Inductive load
C snubber at bus 7
5
3
2 100 –1
10 2 3 5 7 100 2 3 5 7 101 GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A) Feb. 2009
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