Preliminary Datasheet EPC2304 (Efficient Power Conversion) - 6

HerstellerEfficient Power Conversion
Beschreibung200 V, 260 A Enhancement Mode Power Transistor
Seiten / Seite7 / 6 — eGaN® FET DATASHEET. EPC2301. EPC XY. 2304YWW. XYYW. XXXX. XXX. Side View …
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DokumentenspracheEnglisch

eGaN® FET DATASHEET. EPC2301. EPC XY. 2304YWW. XYYW. XXXX. XXX. Side View 2. Exposed. die. Pad 1 is Gate. Pads 2, 4. 6 are Source

eGaN® FET DATASHEET EPC2301 EPC XY 2304YWW XYYW XXXX XXX Side View 2 Exposed die Pad 1 is Gate Pads 2, 4 6 are Source

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eGaN® FET DATASHEET
EPC2304 7 6 5 4 3 1
EPC2301 EPC XY 2304YWW XYYW
2
XXXX XXX
0.10 Max. // ccc C C Site/date code 5
A
Lot code Seating plane eee C
A1 A3 D Side View 2
0.05
A
2.600 Max.
K3
(4x) Die size
B b2
(8x)
7 K1
(3x)
e1 Exposed 6 die E K2 b
(4x)
5 Pad 1 is Gate
; 4.470 Die 5.00
e Pads 2, 4. 6 are Source
; size
4 Pads 3, 5, 7 are Drain
2x C
3
4 bbb M C A B aaa 0.150 Chamfer ddd M C
A3 N 2 1 K4
aaa C 2x
A K L2 L1 b1
(3x)
Top View Side View 1 Bottom View Notes: Dimension (mm) Dimension (mm) SYMBOL SYMBOL MIN Nominal MAX Note MIN Nominal MAX Note
1. Dimensioning and tolerancing conform to ASME Y14.5-2009
A
0.60 0.65 0.70
K
0.35 0.40 0.45
A1
0.00 0.02 0.05
K1
0.10 0.15 0.20 2. All dimensions are in millimeters
A3
0.20 Ref
K2
0.55 0.60 0.65 3.
N
is the total number of terminals
b
0.20 0.25 0.30 4
K3
0.35 0.40 0.45 4. Dimension
b
applies to the metallized
b1
0.30 0.35 0.40 4
K4
0.25 0.30 0.35 terminal. If the terminal has a radius on the
b2
0.20 0.25 0.30 4
aaa
0.05 other end of it, dimension
b
should not be
D
3.00 BSC
bbb
0.10 measured in that radius area.
E
5.00 BSC
ccc
0.10
e
0.85 BSC
ddd
0.05 5. Coplanarity applies to the terminals and all the
e1
0.90 BSC
eee
0.08 other bottom surface metallization.
L1
0.625 0.725 0.825
N
15 3
L2
1.775 1.875 1.975
NE
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