eGaN® FET DATASHEET EPC2304 Dynamic Characteristics# (TJ = 25°C unless otherwise stated)PARAMETERTEST CONDITIONSMINTYPMAXUNIT CISS Input Capacitance 3195 CRSS Reverse Transfer Capacitance VDS = 100 V, VGS = 0 V 2.7 COSS Output Capacitance 649 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 1) 852 VDS = 0 to 100 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 2) 1156 RG Gate Resistance 0.4 Ω QG Total Gate Charge VDS = 100 V, VGS = 5 V, ID = 32 A 24 QGS Gate-to-Source Charge 7.6 QGD Gate-to-Drain Charge VDS = 100 V, ID = 32 A 2.5 nC QG(TH) Gate Charge at Threshold 5 QOSS Output Charge VDS = 100 V, VGS = 0 V 116 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate shorted to source. Note 1: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 2: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS. Figure 1: Typical Output Characteristics at 25°CFigure 2: Typical Transfer Characteristics 250 250 25˚C 200 125˚C 200 VDS = 3 V DS = 6 V 150 150 VGS = 5 V V 100 GS = 4 V – Drain Current (A)– Drain Current (A) 100
VGS = 3 V I D V I D GS = 2 V 50 50 0 0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS – Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)Figure 3: Typical RDS(on) vs. VGS for Various Drain CurrentsFigure 4: Typical RDS(on) vs. VGS for Various Temperatures) I Ω D = 16 A ) 20 ID = 32 A Ω 20 25˚C ID = 48 A 125˚C ance (m ID = 64 A ance (m ID = 32 A 15 15 ce Resist urce Resist urSoSoto- 10 to- 10 – Drain-– Drain- 5