Datasheet IXTA44P15T, IXTP44P15T, IXTQ44P15T, IXTH44P15T (IXYS) - 6
| Hersteller | IXYS |
| Beschreibung | TrenchP Power MOSFETs |
| Seiten / Seite | 8 / 6 — IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T. Fig. 13. Resistive Turn-on … |
| Dateiformat / Größe | PDF / 250 Kb |
| Dokumentensprache | Englisch |
IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T. Fig. 13. Resistive Turn-on Rise Time vs
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IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature Drain Current
50 48 46 RG = 1Ω, VGS = -10V 44 VDS = - 75V 42 40 s s d T n nd R J = 25ºC G = 1Ω, VGS = -10V 38 co co 36 V se I D = - 22A se DS = - 75V 34 no no a a 32 N - Nr 30 - t I tr D = - 44A 28 26 TJ = 125ºC 24 22 18 20 25 35 45 55 65 75 85 95 105 115 125 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 TJ - Degrees Centigrade ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Junction Temperature
250 100 20 65 t r td(on)
- - - -
t f td(off)
- - - -
TJ = 125ºC, VGS = -10V 200 80 19 RG = 1Ω, VGS = -10V 60 VDS = - 75V t V d( DS = - 75V t d( s d on) of nds f) 150 60 - N 18 55 - Na I co secon D = - 44A, - 22A a o n I n n o nose D = - 22A o a secon se N 100 40 17 50 co - tr - Na d f n s t d I D = - 44A s 50 20 16 45 0 0 15 40 0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs. Drain Current Gate Resistance
19 65 180 300 t 160 f td(off)
- - - -
270 TJ = 125ºC T 18 60 J = 125ºC, VGS = -10V t 140 V 240 DS = - 75V t d( d TJ = 125ºC ( of 120 I 210 o D = - 22A ff) nds f nds 17 55 ) - N - N co co 100 180 a a no no nose TJ = 25ºC s nose 80 150 se 16 50 econ c I ond - Na - Na D = - 44A tf f d 60 t 120 s s 15 t 40 90 f td(off)
- - - -
45 T R J = 25ºC G = 1Ω, VGS = -10V 20 60 VDS = - 75V 14 40 0 30 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 0 2 4 6 8 10 12 14 16 18 20 ID - Amperes RG - Ohms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
50 48 46 RG = 1Ω, VGS = -10V 44 VDS = - 75V 42 40 s s d T n nd R J = 25ºC G = 1Ω, VGS = -10V 38 co co 36 V se I D = - 22A se DS = - 75V 34 no no a a 32 N - Nr 30 - t I tr D = - 44A 28 26 TJ = 125ºC 24 22 18 20 25 35 45 55 65 75 85 95 105 115 125 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 TJ - Degrees Centigrade ID - Amperes
Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Junction Temperature
250 100 20 65 t r td(on)
- - - -
t f td(off)
- - - -
TJ = 125ºC, VGS = -10V 200 80 19 RG = 1Ω, VGS = -10V 60 VDS = - 75V t V d( DS = - 75V t d( s d on) of nds f) 150 60 - N 18 55 - Na I co secon D = - 44A, - 22A a o n I n n o nose D = - 22A o a secon se N 100 40 17 50 co - tr - Na d f n s t d I D = - 44A s 50 20 16 45 0 0 15 40 0 2 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs. Drain Current Gate Resistance
19 65 180 300 t 160 f td(off)
- - - -
270 TJ = 125ºC T 18 60 J = 125ºC, VGS = -10V t 140 V 240 DS = - 75V t d( d TJ = 125ºC ( of 120 I 210 o D = - 22A ff) nds f nds 17 55 ) - N - N co co 100 180 a a no no nose TJ = 25ºC s nose 80 150 se 16 50 econ c I ond - Na - Na D = - 44A tf f d 60 t 120 s s 15 t 40 90 f td(off)
- - - -
45 T R J = 25ºC G = 1Ω, VGS = -10V 20 60 VDS = - 75V 14 40 0 30 -22 -24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 0 2 4 6 8 10 12 14 16 18 20 ID - Amperes RG - Ohms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.