Datasheet STTH1L06 (STMicroelectronics)
| Hersteller | STMicroelectronics |
| Beschreibung | Turbo 2 ultrafast high voltage rectifier |
| Seiten / Seite | 9 / 1 — STTH1L06. Features. DO-41. SMB. Description. STTH1L06U. SMA. STTH1L06A. … |
| Dateiformat / Größe | PDF / 112 Kb |
| Dokumentensprache | Englisch |
STTH1L06. Features. DO-41. SMB. Description. STTH1L06U. SMA. STTH1L06A. Table 1. Device summary. Symbol. Value
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STTH1L06
Turbo 2 ultrafast high voltage rectifier
Features
■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance
DO-41 SMB Description STTH1L06 STTH1L06U
The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free
SMA
wheeling diode in power supplies and other power
STTH1L06A
switching applications.
Table 1. Device summary Symbol Value
IF(AV) 1 A VRRM 600 V IR (max) 75 µA Tj (max) 175 °C VF (max) 1.05 V trr (max) 80 ns October 2009 Doc ID 8321 Rev 4 1/9 www.st.com 9 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history
Turbo 2 ultrafast high voltage rectifier
Features
■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching and conduction losses ■ Low thermal resistance
DO-41 SMB Description STTH1L06 STTH1L06U
The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free
SMA
wheeling diode in power supplies and other power
STTH1L06A
switching applications.
Table 1. Device summary Symbol Value
IF(AV) 1 A VRRM 600 V IR (max) 75 µA Tj (max) 175 °C VF (max) 1.05 V trr (max) 80 ns October 2009 Doc ID 8321 Rev 4 1/9 www.st.com 9 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Conduction losses versus average current Figure 2. Forward voltage drop versus forward current Figure 3. Relative variation of thermal impedance junction ambient versus pulse duration Figure 4. Relative variation of thermal impedance junction ambient versus pulse duration Figure 5. Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) Figure 6. Peak reverse recovery current versus dIF/dt (90% confidence) Figure 7. Reverse recovery time versus dIF/dt (90% confidence) Figure 8. Reverse recovery charges versus dIF/dt (90% confidence) Figure 9. Softness factor versus dIF/dt (typical values) Figure 10. Relative variations of dynamic parameters versus junction temperature Figure 11. Transient peak forward voltage versus dIF/dt (90% confidence) Figure 12. Forward recovery time versus dIF/dt (90% confidence) Figure 13. Junction capacitance versus reverse voltage applied (typical values) Figure 14. Thermal resistance junction to ambient versus copper surface under each lead Figure 15. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) 2 Package information Table 6. SMA dimensions Figure 16. Footprint (dimensions in mm) Table 7. SMB dimensions Figure 17. Footprint (dimensions in mm) Table 8. DO-41 (plastic) dimensions 3 Ordering information Table 9. Ordering information 4 Revision history Table 10. Document revision history