Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 5

HerstellerON Semiconductor
BeschreibungComplementary General Purpose Transistor
Seiten / Seite13 / 5 — MBT3946DW1T1G, SMBT3946DW1T1G. (NPN). h PARAMETERS. Figure 11. Current …
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MBT3946DW1T1G, SMBT3946DW1T1G. (NPN). h PARAMETERS. Figure 11. Current Gain. Figure 12. Output Admittance

MBT3946DW1T1G, SMBT3946DW1T1G (NPN) h PARAMETERS Figure 11 Current Gain Figure 12 Output Admittance

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MBT3946DW1T1G, SMBT3946DW1T1G (NPN) h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 100 (NPN) 50 (NPN) m 200 ANCE ( mhos) 20 GAIN 10 100 ADMITT 70 5 feh , CURRENT 50 h , OUTPUT oe 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain Figure 12. Output Admittance
20 10 -4 (NPN) 7.0 10 (NPN) 5.0 TIO (x 10 ) 5.0 3.0 2.0 2.0 IMPEDANCE (k OHMS) 1.0 1.0 ie 0.5 TAGE FEEDBACK RA h , INPUT 0.7 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 h , VOL re 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio
1 ms 1000 100 ms 10 ms 1 ms 100 1 s OR CURRENT (mA) (NPN) 10 , COLLECT I C Single Pulse Test at TA = 25°C 1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 15. Safe Operating Area http://onsemi.com 5