Datasheet Si3430DV (Vishay) - 4

Si3430DV
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 10 0.4 ID = 2.4 A ) ( 0.3 TJ = 150 °C esistance -R 0.2 - On - Source Current (A) I S DS(on) 0.1 R TJ = 25 °C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.6 30 0.4 25 0.2 ID = 250 µA 20 0.0 riance (V) a -0.2 er (W) 15 V w o P -0.4 GS(th) 10 V -0.6 5 -0.8 -1.0 0 -50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power
S19-0836-Rev. E, 30-Sep-2019
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