Datasheet Si3430DV (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 100 V (D-S) MOSFET |
| Seiten / Seite | 10 / 3 — Si3430DV. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
Si3430DV. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. On-Resistance vs. Drain Current. Capacitance
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Si3430DV
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 8 8 VGS = 10 V thru 6 V 5 V 6 6 4 4 rain Current (A) ain Current (A) D - - Dr I D TC = 125 °C I D 2 2 25 °C 4 V -55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.25 500 ) 0.20 400 C iss ( VGS = 6.0 V 0.15 300 V esistance GS = 10 V -R - On 0.10 200 - Capacitance (pF) C DS(on)R 0.05 100 rss C Coss 0.00 0 0 2 4 6 8 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 2.2 VDS = 50 V VGS = 10 V I 2.0 D = 2.4 A ID = 2.4 A ed) 8 1.8 maliz oltage (V) V (Nor 1.6 6 1.4 4 1.2 - Gate-to-Source - On-Resistance 1.0 GS 2 V DS(on)R 0.8 0 0.6 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S19-0836-Rev. E, 30-Sep-2019
3
Document Number: 71235 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 8 8 VGS = 10 V thru 6 V 5 V 6 6 4 4 rain Current (A) ain Current (A) D - - Dr I D TC = 125 °C I D 2 2 25 °C 4 V -55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.25 500 ) 0.20 400 C iss ( VGS = 6.0 V 0.15 300 V esistance GS = 10 V -R - On 0.10 200 - Capacitance (pF) C DS(on)R 0.05 100 rss C Coss 0.00 0 0 2 4 6 8 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 2.2 VDS = 50 V VGS = 10 V I 2.0 D = 2.4 A ID = 2.4 A ed) 8 1.8 maliz oltage (V) V (Nor 1.6 6 1.4 4 1.2 - Gate-to-Source - On-Resistance 1.0 GS 2 V DS(on)R 0.8 0 0.6 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S19-0836-Rev. E, 30-Sep-2019
3
Document Number: 71235 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000