Datasheet UF3C065080B7S (UnitedSiC) - 9

HerstellerUnitedSiC
Beschreibung650V-85mW SiC FET
Seiten / Seite10 / 9 — 100. 350. 1ms. VDS. =. 400V,. VGS. =. -5V/12V. 300. RG_ON. =. 8.5W,. …
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DokumentenspracheEnglisch

100. 350. 1ms. VDS. =. 400V,. VGS. =. -5V/12V. 300. RG_ON. =. 8.5W,. RG_OFF. =. 22W. J). FWD:. same. device. with. VGS. =. (. m. -5V,. R. ). y. 250. G. =. 22W. 10. A. g. (. 10ms. re. Etot. I. n. ,. D. 200. E

100 350 1ms VDS = 400V, VGS = -5V/12V 300 RG_ON = 8.5W, RG_OFF = 22W J) FWD: same device with VGS = ( m -5V, R ) y 250 G = 22W 10 A g ( 10ms re Etot I n , D 200 E

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100 350 1ms VDS = 400V, VGS = -5V/12V 300 RG_ON = 8.5W, RG_OFF = 22W J) FWD: same device with VGS = ( m -5V, R ) y 250 G = 22W 10 A g ( 10ms re Etot I n , D 200 E Eon nt g e n r Eoff r 100ms hi 150 Cu itc 1 n Sw 100 air 1ms D DC 10ms 50 0.1 0 1 10 100 1000 0 5 10 15 20 25 30 Drain-Source Voltage, V Drain Current, I DS (V) D (A) Figure 17. Safe operation area at TC = 25°C, D = 0, Figure 18. Clamped inductive switching energy vs. Parameter t drain current at T p J = 25°C 200 80 70 J) J) m( 150 m( 60 FF E ON , E O 50 y , g y r g e 100 r 40 n e E n E on V ff 30 DS = 400V, VGS = -5V/12V n- O r I 50 D = 20A, TJ = 25°C n-r 20 V Tu FWD: same device with V DS = 400V, VGS = -5V/12V GS = - 5V, R Tu ID = 20A, TJ =25°C G = 22W 10 FWD: same device with VGS = -5V 0 0 0 5 10 15 20 25 0 20 40 60 80 100 Total External RG, RG,EXT_ON (W) Total External RG, RG,EXT_OFF (W) Figure 19. Clamped inductive switching turn-on Figure 20. Clamped inductive switching turn-off energy vs. RG,EXT_ON energy vs. RG,EXT_OFF Datasheet: UF3C065080B7S Rev. A, November 2020 9