Datasheet UF3C065080B7S (UnitedSiC) - 8

HerstellerUnitedSiC
Beschreibung650V-85mW SiC FET
Seiten / Seite10 / 8 — 30. 1,000. Ciss. ). 25. ). A(. pF. I. D. (. t,. 20. C. 100. n. ,. Coss. …
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DokumentenspracheEnglisch

30. 1,000. Ciss. ). 25. ). A(. pF. I. D. (. t,. 20. C. 100. n. ,. Coss. e. e. rr. nc. 15. Cu. ita. 10. n. ac. ai. p. r. D. 10. Ca. Crss. C. 1. D. 5. 0. 0. 0. 100. 200. 300. 400. 500. 600. -75. -50. -25. 0. 25. 50. 75. 100. 125. 150

30 1,000 Ciss ) 25 ) A( pF I D ( t, 20 C 100 n , Coss e e rr nc 15 Cu ita 10 n ac ai p r D 10 Ca Crss C 1 D 5 0 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150

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30 1,000 Ciss ) 25 ) A( pF I D ( t, 20 C 100 n , Coss e e rr nc 15 Cu ita 10 n ac ai p r D 10 Ca Crss C 1 D 5 0 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 150 1 ) W( /W C ot °( P t , 100 n JC io Z q 0.1 , D = 0.5 at e ip nc D = 0.3 ss a i d D = 0.1 D r 50 D = 0.05 e mpeI 0.01 w l o a D = 0.02 P mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3C065080B7S Rev. A, November 2020 8