Datasheet BSS89 (Infineon) - 3

HerstellerInfineon
BeschreibungSIPMOS Small-Signal-Transistor
Seiten / Seite8 / 3 — Rev. 2.2. BSP89. Electrical Characteristics. Parameter. Symbol. …
Revision02_02
Dateiformat / GrößePDF / 668 Kb
DokumentenspracheEnglisch

Rev. 2.2. BSP89. Electrical Characteristics. Parameter. Symbol. Conditions. Values. Unit. min. typ. max. Dynamic Characteristics

Rev 2.2 BSP89 Electrical Characteristics Parameter Symbol Conditions Values Unit min typ max Dynamic Characteristics

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Rev. 2.2 BSP89 Electrical Characteristics
, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics
Transconductance gfs VDS³2*ID*RDS(on)max, 0.18 0.36 - S ID=0.28A Input capacitance Ciss VGS=0, VDS=25V, - 80 140 pF Output capacitance C f=1MHz oss - 11.2 16.8 Reverse transfer capacitance Crss - 5.2 7.8 Turn-on delay time td(on) VDD=120V, VGS=10V, - 4 6 ns Rise time t I r D=0.35A, RG=6W - 3.5 5.3 Turn-off delay time td(off) - 15.9 23.8 Fall time tf - 18.4 27.6
Gate Charge Characteristics
Gate to source charge Qgs VDD=192V, ID=0.35A - 0.2 0.3 nC Gate to drain charge Qgd - 2 3 Gate charge total Qg VDD=192V, ID=0.35A, - 4.3 6.4 VGS=0 to 10V Gate plateau voltage V(plateau) VDD=192V, ID = 0.35 A - 3.1 - V
Reverse Diode
Inverse diode continuous IS TA=25°C - - 0.35 A forward current Inv. diode direct current, pulsed ISM - - 1.4 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.85 1.2 V Reverse recovery time trr VR=120V, IF=lS, - 67 100 ns Reverse recovery charge Q di rr F/dt=100A/µs - 123 184 nC Page 3 2012-11-29