Datasheet TIPL762, TIPL762A (Bourns) - 3

HerstellerBourns
BeschreibungNPN SILICON POWER TRANSISTORS
Seiten / Seite6 / 3 — TIPL762, TIPL762A. NPN SILICON POWER TRANSISTORS. PARAMETER MEASUREMENT …
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TIPL762, TIPL762A. NPN SILICON POWER TRANSISTORS. PARAMETER MEASUREMENT INFORMATION. +5V. D45H11. BY205-400. (on). 1 pF. 180. vcc. V Gen

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +5V D45H11 BY205-400 (on) 1 pF 180 vcc V Gen

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TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33

+5V D45H11 BY205-400 BY205-400 RB 33

(on) 1 pF 180
µ
H vcc V Gen 2N2222 1 k

BY205-400 68

0.02
µ
F TUT 1 k

Vclamp = 400 V +5V 5X BY205-400 270

BY205-400 1 k
Ω E
2N2904
Adjust pw to obtain IC
D44H11 47
Ω For IC < 6 A VCC = 50 V
VBE(off)
For IC ≥ 6 A VCC = 100 V
100

Figure 1. Inductive-Load Switching Test Circuit IB(on) A (90%)
A - B = t
I Base Current
sv
B
OBSOLET B - C = trv D - E = tfi E - F = tti
C 90%
B - E = txo
B 10% V Collector Voltage CE D (90%) E (10%) I Collector Current C(on) F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types.
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002 3 Specifications are subject to change without notice.