Datasheet TIPL762, TIPL762A (Bourns) - 2

HerstellerBourns
BeschreibungNPN SILICON POWER TRANSISTORS
Seiten / Seite6 / 2 — TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS
Dateiformat / GrößePDF / 167 Kb
DokumentenspracheEnglisch

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

Modelllinie für dieses Datenblatt

Textversion des Dokuments

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter TIPL762 400 VCEO(sus) I V sustaining voltage C = 100 mA L = 25 mH (see Note 2) TIPL762A 450 VCE = 850 V VBE = 0 TIPL762 50 Collector-emitter V V TIPL762A 50 I CE = 1000 V BE = 0 CES µA cut-off current VCE = 850 V VBE = 0 TC = 100°C TIPL762 200 VCE = 1000 V VBE = 0 TC = 100°C TIPL762A 200 Collector cut-off V I TIPL762 50 I CE = 400 V B = 0 CEO µA current VCE = 450 V IB = 0 TIPL762A 50 Emitter cut-off IEBO V current EB = 10 V IC = 0 1 mA Forward current hFE V transfer ratio CE = 5 V IC = 0.5 A (see Notes 3 and 4) 20 60 IB = 0.4 A IC = 2 A 0.5 Collector-emitter I I (see Notes 3 and 4) 1.0 V B = 0.8 A C = 4 A CE(sat) V saturation voltage IB = 1.2 A IC = 6 A 2.5 IB = 1.2 A IC = 6 A TC = 100°C 5.0 IB = 0.4 A IC = 2 A 1.1 Base-emitter I I (see Notes 3 and 4) 1.3 V B = 0.8 A C = 4 A BE(sat) V saturation voltage IB = 1.2 A IC = 6 A 1.5 IB = 1.2 A IC = 6 A TC = 100°C 1.4 E Current gain ft V bandwidth product CE = 10 V IC = 0.5 A f = 1 MHz 6 MHz Cob Output capacitance VCB = 20 V IE = 0 f = 0.1 MHz 105 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.25 °C/W OBSOLET
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT
tsv Voltage storage time 2.5 µs trv Voltage rise time 200 ns IC = 6 A t I fi Current fall time 150 ns V B(on) = 1.2 A (see Figures 1 and 2) BE(off) = -10 V tti Current tail time 50 ns txo Cross over time 300 ns tsv Voltage storage time 3 µs trv Voltage rise time 300 ns IC = 6 A IB(on) = 1.2 A t (see Figures 1 and 2) fi Current fall time 150 ns VBE(off) = -10 V TC = 100°C tti Current tail time 50 ns txo Cross over time 500 ns

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. AUGUST 1978 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.