Datasheet C2M1000170J (Wolfspeed) - 2
| Hersteller | Wolfspeed |
| Beschreibung | Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω |
| Seiten / Seite | 10 / 2 — Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test Conditions. Note. Reverse Diode Characteristics
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Electrical Characteristics
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.6 4 V VDS = VGS, ID = 0.5 mA V Fig. 11 GS(th) Gate Threshold Voltage 2.1 V VDS = VGS, ID = 0.5 mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.7 kV, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 1.0 1.4 VGS = 20 V, ID = 2 A RDS(on) Drain-Source On-State Resistance Ω Fig. 4,5,6 2.0 VGS = 20 V, ID = 2 A, TJ = 150 °C 0.82 VDS= 20 V, IDS= 2 A g Fig. 7 fs Transconductance S 0.81 VDS= 20 V, IDS= 2 A, TJ = 150 °C Ciss Input Capacitance 200 VGS = 0 V Coss Output Capacitance 12 pF V Fig. 17,18 DS = 1000 V Crss Reverse Transfer Capacitance 1.3 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 7 μJ Fig 16 EON Turn-On Switching Energy 31 VDS = 1.2 kV, VGS = -5/20 V μJ I = 2 A, R = 2.5 Ω, Fig. 26 D G(ext) EOFF Turn Off Switching Energy 10 L= 1368 μH, TJ = 150 °C td(on) Turn-On Delay Time 4 VDD = 1.2 kV, VGS = -5/20 V tr Rise Time 4.8 I = 600 Ω ns D = 2 A, RG(ext) = 2.5 Ω, RL Fig. 27 Timing relative to V t DS d(off) Turn-Off Delay Time 10.8 Per IEC60747-8-4 pg 83 tf Fall Time 40.4 RG(int) Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 4.7 VDS = 1.2 kV, VGS = -5/20 V Qgd Gate to Drain Charge 5.4 nC ID = 2 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 13
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
3.8 V V = - 5 V, I = 1 A, T = 25 °C V GS SD J Fig. 8, 9, SD Diode Forward Voltage 10 3.3 V V = - 5 V, I = 1 A, T = 150 °C GS SD J IS Continuous Diode Forward Current 4 A T = 25 °C Note 1 C t Reverse Recovery Time 20 ns rr V = - 5 V, I = 2 A T = 25 °C GS SD J V = 1.2 kV R Q Reverse Recovery Charge 24 nC Note 1 rr dif/dt = 1200 A/µs I Peak Reverse Recovery Current 6.5 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.5 1.6 °C/W Fig. 21 RθJC Thermal Resistance from Junction to Ambient 40
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C2M1000170J Rev. B, 12-2017
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.6 4 V VDS = VGS, ID = 0.5 mA V Fig. 11 GS(th) Gate Threshold Voltage 2.1 V VDS = VGS, ID = 0.5 mA, TJ = 150 °C IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.7 kV, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 1.0 1.4 VGS = 20 V, ID = 2 A RDS(on) Drain-Source On-State Resistance Ω Fig. 4,5,6 2.0 VGS = 20 V, ID = 2 A, TJ = 150 °C 0.82 VDS= 20 V, IDS= 2 A g Fig. 7 fs Transconductance S 0.81 VDS= 20 V, IDS= 2 A, TJ = 150 °C Ciss Input Capacitance 200 VGS = 0 V Coss Output Capacitance 12 pF V Fig. 17,18 DS = 1000 V Crss Reverse Transfer Capacitance 1.3 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 7 μJ Fig 16 EON Turn-On Switching Energy 31 VDS = 1.2 kV, VGS = -5/20 V μJ I = 2 A, R = 2.5 Ω, Fig. 26 D G(ext) EOFF Turn Off Switching Energy 10 L= 1368 μH, TJ = 150 °C td(on) Turn-On Delay Time 4 VDD = 1.2 kV, VGS = -5/20 V tr Rise Time 4.8 I = 600 Ω ns D = 2 A, RG(ext) = 2.5 Ω, RL Fig. 27 Timing relative to V t DS d(off) Turn-Off Delay Time 10.8 Per IEC60747-8-4 pg 83 tf Fall Time 40.4 RG(int) Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 4.7 VDS = 1.2 kV, VGS = -5/20 V Qgd Gate to Drain Charge 5.4 nC ID = 2 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 13
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
3.8 V V = - 5 V, I = 1 A, T = 25 °C V GS SD J Fig. 8, 9, SD Diode Forward Voltage 10 3.3 V V = - 5 V, I = 1 A, T = 150 °C GS SD J IS Continuous Diode Forward Current 4 A T = 25 °C Note 1 C t Reverse Recovery Time 20 ns rr V = - 5 V, I = 2 A T = 25 °C GS SD J V = 1.2 kV R Q Reverse Recovery Charge 24 nC Note 1 rr dif/dt = 1200 A/µs I Peak Reverse Recovery Current 6.5 A rrm Note (1): When using SiC Body Diode the maximum recommended V = -5V GS
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 1.5 1.6 °C/W Fig. 21 RθJC Thermal Resistance from Junction to Ambient 40
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C2M1000170J Rev. B, 12-2017