Datasheet C2M1000170J (Wolfspeed) - 4
| Hersteller | Wolfspeed |
| Beschreibung | Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω |
| Seiten / Seite | 10 / 4 — Typical Performance. Conditions:. VDS = 20 V. Condition:. tp < 200 µs. … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
Typical Performance. Conditions:. VDS = 20 V. Condition:. tp < 200 µs. VGS = -5 V. TJ = -55 °C. VGS = 0 V. (A). TJ = 150 °C. nt, I DS
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Typical Performance 5 -6 -5 -4 -3 -2 -1 0 Conditions: 0 VDS = 20 V Condition: tp < 200 µs VGS = -5 V TJ = -55 °C 4 VGS = 0 V tp < 200 µs (A) TJ = 150 °C -1 nt, I DS (A) 3 VGS = -2 V TJ = 25 °C nt, I DS -2 2 TJ = -55 °C in-Source Curre -3 Dra 1 in-Source Curre Dra -4 0 0 2 4 6 8 10 12 14 16 -5 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 0 Condition: Condition: VGS = -5 V TJ = 25 °C VGS = -5 V T V J = 150 °C V tp < 200 µs GS = 0 V t GS = 0 V p < 200 µs -1 -1 (A) (A) VGS = -2 V V nt, I DS GS = -2 V -2 nt, I DS -2 -3 -3 in-Source Curre in-Source Curre Dra -4 Dra -4 -5 -5 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.5 25 C C o o ndi ndittiio o ns ns Conditions: V V = V 3.0 DS DS = 10 V GS I I I DS = 2 A DS DS = 0 = 0. .5 5 mA mA 20 IGS = 100 mA VDS = 1200 V 2.5 TJ = 25 °C (V) (V) 15 V th 2.0 V GS 10 1.5 e Voltage, hold Voltage, 5 1.0 e-Sourc Thres 0.5 Gat 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
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C2M1000170J Rev. B, 12-2017
Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 0 Condition: Condition: VGS = -5 V TJ = 25 °C VGS = -5 V T V J = 150 °C V tp < 200 µs GS = 0 V t GS = 0 V p < 200 µs -1 -1 (A) (A) VGS = -2 V V nt, I DS GS = -2 V -2 nt, I DS -2 -3 -3 in-Source Curre in-Source Curre Dra -4 Dra -4 -5 -5 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC
3.5 25 C C o o ndi ndittiio o ns ns Conditions: V V = V 3.0 DS DS = 10 V GS I I I DS = 2 A DS DS = 0 = 0. .5 5 mA mA 20 IGS = 100 mA VDS = 1200 V 2.5 TJ = 25 °C (V) (V) 15 V th 2.0 V GS 10 1.5 e Voltage, hold Voltage, 5 1.0 e-Sourc Thres 0.5 Gat 0 0.0 -5 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
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C2M1000170J Rev. B, 12-2017