Datasheet HMC-ALH435 (Analog Devices) - 4

HMC-ALH435
v03.1009
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz
1
Pad Descriptions
Pad Number Function Description Interface Schematic This pad is AC coupled 1 RFIN IP and matched to 50 Ohms. H Gate control for amplifi er. Please follow “MMIC Amplifi er Bias- C 2 Vgg1 ing Procedure” application note. See assembly for required - external components. RS Gate control for amplifi er. Please follow “MMIC Amplifi er Bias- IE 3 Vgg2 ing Procedure” application note. See assembly for required external components. IF L This pad is AC coupled P 4 RFOUT and matched to 50 Ohms. M A E Power Supply Voltage for the amplifi er. See assembly for 5 Vdd required external components. IS O N W Die bottom GND Die bottom must be connected to RF/DC ground. O L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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