Datasheet HMC-ALH435 (Analog Devices) - 3

HMC-ALH435
v03.1009
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc RF Input Power 15 dBm IP ELECTROSTATIC SENSITIVE DEVICE Channel Temperature 180 °C H OBSERVE HANDLING PRECAUTIONS Continuous Power Pdiss (T = 85 °C) 0.45 W C derate 4.7 mW/ °C above 85 °C - Thermal Resistance 213.3 °C/W (channel to die bottom) RS Storage Temperature -65 to +150 °C IE Operating Temperature -55 to +85 °C IF L
Outline Drawing
P M A E IS O N W O L NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. GP-2 (Gel Pack) [2] 4. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD. packaging dimensions. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 7. OVERALL DIE SIZE ±.002” Microwave Corporation. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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