Datasheet MTP2P50EG (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 |
| Seiten / Seite | 8 / 2 — MTP2P50EG. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Revision | 7 |
| Dateiformat / Größe | PDF / 241 Kb |
| Dokumentensprache | Englisch |
MTP2P50EG. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MTP2P50EG ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 mAdc) 500 − − Vdc Temperature Coefficient (Positive) − 564 − mV/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 500 Vdc, VGS = 0 Vdc) − − 10 (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 mAdc) 2.0 3.0 4.0 Vdc Temperature Coefficient (Negative) − 4.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 1.0 Adc) RDS(on) − 4.5 6.0 W Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 2.0 Adc) − 9.5 14.4 (ID = 1.0 Adc, TJ = 125°C) − − 12.6 Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) gFS 0.5 − − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 845 1183 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 100 140 Reverse Transfer Capacitance Crss − 26 52
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 12 24 ns Rise Time t (V r − 14 28 DD = 250 Vdc, ID = 2.0 Adc, V Turn−Off Delay Time GS = 10 Vdc, RG = 9.1 W) td(off) − 21 42 Fall Time tf − 19 38 Gate Charge (See Figure 8) QT − 19 27 nC Q (V 1 − 3.7 − DS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) Q2 − 7.9 − Q3 − 9.9 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1) V Vdc (I SD S = 2.0 Adc, VGS = 0 Vdc) − 2.3 3.5 (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) − 1.85 − Reverse Recovery Time trr − 223 − ns (See Figure 14) t (I a − 161 − S = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) tb − 62 − Reverse Recovery Stored Charge QRR − 1.92 − mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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MTP2P50EG ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 mAdc) 500 − − Vdc Temperature Coefficient (Positive) − 564 − mV/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 500 Vdc, VGS = 0 Vdc) − − 10 (VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 mAdc) 2.0 3.0 4.0 Vdc Temperature Coefficient (Negative) − 4.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 1.0 Adc) RDS(on) − 4.5 6.0 W Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 2.0 Adc) − 9.5 14.4 (ID = 1.0 Adc, TJ = 125°C) − − 12.6 Forward Transconductance (VDS = 15 Vdc, ID = 1.0 Adc) gFS 0.5 − − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 845 1183 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 100 140 Reverse Transfer Capacitance Crss − 26 52
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 12 24 ns Rise Time t (V r − 14 28 DD = 250 Vdc, ID = 2.0 Adc, V Turn−Off Delay Time GS = 10 Vdc, RG = 9.1 W) td(off) − 21 42 Fall Time tf − 19 38 Gate Charge (See Figure 8) QT − 19 27 nC Q (V 1 − 3.7 − DS = 400 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) Q2 − 7.9 − Q3 − 9.9 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1) V Vdc (I SD S = 2.0 Adc, VGS = 0 Vdc) − 2.3 3.5 (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) − 1.85 − Reverse Recovery Time trr − 223 − ns (See Figure 14) t (I a − 161 − S = 2.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) tb − 62 − Reverse Recovery Stored Charge QRR − 1.92 − mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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