Datasheet NDS8947 (Fairchild) - 2

Electrical Characteristics
(T = 25°C unless otherwise noted) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = -250 µA -30 V DSS
GS D
I Zero Gate Voltage Drain Current V = -24 V, V = 0 V -1 µA DSS
DS GS
T = 55°C -10 µA
J
I Gate - Body Leakage, Forward V = 20 V, V = 0 V 100 nA GSSF
GS DS
I Gate - Body Leakage, Reverse V = -20 V, V = 0 V -100 nA GSSR
GS DS ON CHARACTERISTICS
(Note 2) V Gate Threshold Voltage V

= V , I

= -250 µA -1 -1.6 -2.8 V GS(th)
DS GS D
T = 125°C -0.7 -1.2 -2.2
J
R Static Drain-Source On-Resistance V = -10 V, I = -4.0 A 0.052 0.065 Ω DS(ON)
GS D
T = 125°C 0.075 0.13
J
V = -4.5 V, I = -3.3 A 0.085 0.1
GS D
I On-State Drain Current V = -10 V, V = -5 V -15 A D(on) GS DS V = -4.5 V, V = -5 V -5 GS DS g Forward Transconductance V = -10 V, I = -4.0 A 7 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = -15 V, V = 0 V, 690 pF iss DS GS f = 1.0 MHz C Output Capacitance 430 pF oss C Reverse Transfer Capacitance 160 pF rss
SWITCHING CHARACTERISTICS
(Note 2) t Turn - On Delay Time V = -10 V, I = -1 A, 9 20 ns D(on) DD D V = -10 V, R = 6 Ω t Turn - On Rise Time GEN GEN 20 30 ns r t Turn - Off Delay Time 40 50 ns D(off) t Turn - Off Fall Time 19 40 ns f Q Total Gate Charge V = -10 V, 21 30 nC g DS I = -4.0 A, V = -10 V D GS Q Gate-Source Charge 3.1 nC gs Q Gate-Drain Charge 5.1 nC gd NDS8947.SAM