Datasheet NDS8947 (Fairchild) - 4

HerstellerFairchild
BeschreibungDual P-Channel Enhancement Mode Field Effect Transistor
Seiten / Seite7 / 4 — Typical Electrical Characteristics. Figure 1. On-Region Characteristics. …
Dateiformat / GrößePDF / 204 Kb
DokumentenspracheEnglisch

Typical Electrical Characteristics. Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Typical Electrical Characteristics Figure 1 On-Region Characteristics Figure 2 On-Resistance Variation with Gate

Modelllinie für dieses Datenblatt

Textversion des Dokuments

Typical Electrical Characteristics
-20 3 V = -10V GS -6.0 V = -3.5V GS -5.0 2.5 -15 - 4.0 -4.5 -4.5 -4.0 2 -5.0 -10 -3.5 1.5 -6.0 DS(on) -5 R , NORMALIZED -10 -3.0 1 I , DRAIN-SOURCE CURRENT (A) D DRAIN-SOURCE ON-RESISTANCE 0 0.5 0 -1 -2 -3 -4 0 -4 -8 -12 -16 -20 V , DRAIN-SOURCE VOLTAGE (V) DS I , DRAIN CURRENT (A) D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
1.6 2 I = -4.0A V = -10V D GS 1.4 V = -10V GS 1.5 T = 125°C J 1.2 1 25°C 1 DS(on) DS(ON) R , NORMALIZED R , NORMALIZED 0.8 -55°C DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 0.6 0.5 -50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 -4 -8 -12 -16 -20 T , JUNCTION TEMPERATURE (°C) I , DRAIN CURRENT (A) J D
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Drain Temperature. Current and Temperature.
-20 1.2 V = -10V T = -55°C J V = V DS DS GS 125°C 1.1 I = -250µA D -15 25°C 1 -10 0.9 th 0.8 V , NORMALIZED D -5 I , DRAIN CURRENT (A) 0.7 GATE-SOURCE THRESHOLD VOLTAGE 0.6 0 -50 -25 0 25 50 75 100 125 150 -1 -2 -3 -4 -5 -6 T , JUNCTION TEMPERATURE (°C) V , GATE TO SOURCE VOLTAGE (V) GS J
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature.
NDS8947.SAM