Datasheet IQE013N04LM6 (Infineon) - 6

OptiMOSTMPower-MOSFET,40V IQE013N04LM6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent
120 240 100 200 80 160
[W]
60
[A]
120
tot D P I
40 80 20 40 0 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
T C[°C] T C[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
103 101 1 µs 10 µs 102 100 µs 100 0.5 101 1 ms
[A] [K/W]
0.2
D I thJC
0.1 100 10 ms
Z
0.05 10-1 DC 0.02 0.01 10-1 single pulse 10-2 10-2 10-1 100 101 102 10-5 10-4 10-3 10-2 10-1 100
V DS[V] t p[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T Final Data Sheet 6 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer