Datasheet Infineon IQE013N04LM6ATMA1 — Datenblatt
| Hersteller | Infineon |
| Serie | IQE013N04LM6 |
| Artikelnummer | IQE013N04LM6ATMA1 |
OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on)
Datenblätter
Datasheet IQE013N04LM6
PDF, 1.4 Mb, Sprache: en, Revision: 02_00, Datei hochgeladen: Nov 2, 2020, Seiten: 13
OptiMOS Power-MOSFET, 40V
OptiMOS Power-MOSFET, 40V
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Detaillierte Beschreibung
Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package.
This best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor.
One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.
Status
| Lifecycle Status | Active (Recommended for new designs) |
Modellreihe
Serie: IQE013N04LM6 (1)
- IQE013N04LM6ATMA1
Herstellerklassifikation
- Power > MOSFET (Si/SiC) > 12V-300V N-Channel Power MOSFET