Datasheet SSM3H137TU (Toshiba) - 4
| Hersteller | Toshiba |
| Beschreibung | MOSFETs Silicon N-Channel MOS |
| Seiten / Seite | 9 / 4 — SSM3H137TU. 5.5. Source-Drain. Characteristics. (Unless. otherwise. … |
| Dateiformat / Größe | PDF / 231 Kb |
| Dokumentensprache | Englisch |
SSM3H137TU. 5.5. Source-Drain. Characteristics. (Unless. otherwise. specified,. Ta. =. 25. ). Characteristics. Symbol. Test. Condition. Min. Typ. Max. Unit
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SSM3H137TU 5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Test Condition Min Typ. Max Unit Diode forward voltage (Note 1) VDSF ID = -2.0 A, VGS = 0 V -0.82 -1.2 V Note 1: Pulse measurement. 6. Marking Fig. 6.1 Marking ©2016 Toshiba Corporation 4 2016-03-25 Rev.1.0