Datasheet Toshiba SSM3H137TU — Datenblatt

HerstellerToshiba
SerieSSM3H137TU
ArtikelnummerSSM3H137TU
Datasheet Toshiba SSM3H137TU

Kleine MOSFETs mit niedrigem Einschaltwiderstand

Datenblätter

Datasheet SSM3H137TU
PDF, 231 Kb, Sprache: en, Datei veröffentlicht: Mar, 2016, Seiten: 9
MOSFETs Silicon N-Channel MOS
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)

Verpackung

Pins3
Package CodeSOT-323F
Manufacture Package CodeUFM
MountingSurface Mount
Width×Length×Height2.0×2.1×0.7 mm

Parameter

AEC-Q101Qualified(*)
Application ScopeRelay Drivers
Assembly basesThailand
Drain current2.0 A
Drain-Source on-resistance (Max) [|VGS|=10V]240 mΩ
Drain-Source on-resistance (Max) [|VGS|=4.5V]280 mΩ
Drain-Source on-resistance (Max) [|VGS|=4V]295 mΩ
Drain-Source voltage34 V
FeaturesRelay Drivers
Gate threshold voltage (Max)1.7 V
Gate-Source voltage+/-20 V
GenerationU-MOSⅣ
Input capacitance (Typ.)119 pF
Internal ConnectionSingle
PolarityN-ch + Active Clamp Zener
Power Dissipation0.8 W
Total gate charge (Typ.) [VGS=10V]3.0 nC

Öko-Plan

RoHSCompliant

Herstellerklassifikation